材料科学
接触电阻
导电体
铜
硅
光电子学
电接点
电极
图层(电子)
薄板电阻
太阳能电池
金属化
复合材料
冶金
化学
物理化学
作者
Vladimir M. Kravchenko,V. V. Malyutina-Bronskaya,H. S. Kuzmitskaya,Anton V. Nestsiaronak
标识
DOI:10.3897/j.moem.10.2.129762
摘要
This paper presents the results of obtaining and studying the electrical and optical characteristics of an optically transparent highly conductive Ni/Cu/Ti/ITO contact in order to reduce electrical resistance losses on the front side of the silicon solar cell. The topology of the contact metallization is a square 50 × 50 mm 2 with an interdigitated electrode structure. A Ni/Cu/Ti contact metallization formed on ITO layer reduces the surface resistance by more than 60 times. It has been shown that the use of a Ni/Cu/Ti contact with a finger thickness of at least 1.5 μm and a width of 17 μm was formed is a good alternative to traditional contacts for silicon solar cells based on silver paste.
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