记忆电阻器
横杆开关
计算机科学
电子线路
电子工程
逻辑门
电路设计
计算机体系结构
量子点细胞自动机
电气工程
工程类
嵌入式系统
作者
Ioannis Vourkas,Georgios Ch. Sirakoulis
出处
期刊:IEEE Transactions on Nanotechnology
[Institute of Electrical and Electronics Engineers]
日期:2012-11-01
卷期号:11 (6): 1151-1159
被引量:121
标识
DOI:10.1109/tnano.2012.2217153
摘要
Over 30 years ago L. Chua proposed the existence of a new class of passive circuit elements, which he called memristors and memristive devices. The unique electrical characteristics associated with them, along with the advantages of crossbar structures, have the potential to revolutionize computing architectures. A well-defined and effective memristor model for circuit design combined with a design paradigm based on well-understood underlying logic design principles would certainly accelerate research on nanoscale circuits and systems. Toward this goal, we propose a memristor crossbar circuit design paradigm in which memristors are modeled using the quantum mechanical phenomenon of tunneling. We use this circuit model to design and simulate various logic circuit designs capable of universal computation. Finally, we develop and present a new design paradigm for memristor-based crossbar circuits.
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