退火(玻璃)
多孔硅
硅
多孔性
扫描电子显微镜
材料科学
多孔介质
纳米技术
复合材料
光电子学
作者
R. Sabet‐Dariani,D. Haneman
摘要
High-resolution scanning electron microscopy of porous silicon (PS) subjected to various annealing treatments in vacuum has revealed a spheroidal particlelike structure that only becomes clearly apparent after treatment at about 250 °C. This is consistent with recent suggestions that any quantum effects arise from particles. It is deduced that the particles have a coating that is reduced or removed on heating. The concomitant effects on the current-voltage curves of PS, caused by annealing and also by prolonged air exposure, have been measured, and are consistent with the interpretation.
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