Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor

We demonstrate a flexible nonvolatile multilevel memory and artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor which exhibits pronounced nonlinear magnetoelectric effects at room temperature. The states of the magnetoelectric voltage coefficient αE of the memtranstor are used to encode binary information. By applying selective electric-field pulses, the states of αE can be switched repeatedly among 2n states (n = 1, 2, 3) in a zero dc bias magnetic field. In addition, the magnetoelectric coefficient is used to act as synaptic weight, and the induced magnetoelectric voltage VME is regarded as postsynaptic potentials (excitatory or inhibitory). The artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor display the long-term potentiation (depression) and spiking-time-dependent plasticity behaviors. The advantages of a simple structure, flexibility, multilevel, and self-biasing make the Cu/P(VDF-TrFE)/Ni organic memtranstor a promising candidate for applications in nonvolatile memory as well as artificial synaptic devices with low energy consumption.