Development of a 780nm narrow line width semiconductor laser device

For the requirement of cold atom interference technology, a 780nm narrow line width extended cavity diode laser device is developed and verified. Based on the simulation modeling of extended cavity and light beam, the laser structure, hermetic package, hybrid integration process and thermal control design is introduced. Then the integration of LD and multiple micro-optical elements are realized with a self-building integration platform, and the die-bonding process is also indicated in details. Finally, the integrated device is tested and verified to have 100KHz line width in 780.24nm, with a 50mW output power.