X射线探测器
探测器
纳米线
光电子学
二极管
材料科学
光电导性
阴极
微晶
X射线
光学
物理
电气工程
工程类
冶金
作者
Zhipeng Zhang,Zhaojun Zhang,Wei Zheng,Kai Wang,Huanjun Chen,Shaozhi Deng,Feng Huang,Jun Chen
标识
DOI:10.1002/admt.201901108
摘要
Abstract Photoconductive cold cathode X‐ray detectors are highly promising for use in medical diagnosis, industrial inspection, and scientific research applications. However, development of highly sensitive, fast, and stable direct conversion X‐ray detectors remains very challenging because of structural and material limitations. This article presents a direct conversion X‐ray detector based on a HgI 2 crystal and a ZnO nanowire vacuum diode with sensitivity of 6.8 × 10 3 µCGy air −1 cm −2 , which is nearly two orders of magnitude higher than that of a commercial a‐Se X‐ray detector. The X‐ray detector, which uses a high‐crystallization HgI 2 photoconductor, shows a response time of 0.24 ms, thus significantly outperforming the polycrystalline HgI 2 X‐ray detector. In addition, the current limitation between the HgI 2 photoconductor and the ZnO nanowire cold cathodes guaranteed device reliability under high applied electric fields for practical applications. The findings presented in this work demonstrate that the proposed X‐ray detector based on the HgI 2 photoconductor and the ZnO nanowire vacuum diode is highly efficient and stable.
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