Fabrication and properties of silicon reach-through avalanche photodiodes

The reach-through avalanche photodiode (RAPD) has attracted much attention in optical detection systems due to its lower noise, satisfactory efficiency, and fast response characteristics. The n+pπp+ structure of RAPDs is fabricated by using ion implantation and a successive diffusion process. Several properties of devices, including breakdown voltage, efficiency, noise, and speed of response, are measured and studied. These devices can be used as the optical detector in optical fiber communication systems.