Polarized Raman spectroscopy–stress relationship considering shear stress effect

This Letter uses polarized Raman spectroscopy as a “strain rosette” to quantitatively determine all the in-plane components of the stress tensor for (110) silicon. Through polarized Raman spectroscopy, Raman wavenumber shifts can be obtained at the same point with different polarization directions of the incident and/or scattered light. With at least three measured Raman shifts in different polarized directions, the three stress components of a surface that contains two non-equal normal stresses and one shear stress can be calculated accordingly. We develop an analytical and linear Raman wavenumber shift–stress relationship when shear stress is considered. The experimental results verify the theoretical predictions. It shows that the simple stress condition assumption may lead to erroneous results.