Power scaling of laser diode modules using high-power DBR chips

A family of laser diode modules emitting hundreds of watt and based on intrinsically wavelength stabilized narrow linewidth high-power Distributed Bragg Reflector (DBR) chips has been manufactured and fully characterized. The module layout exploits a proprietary architecture to combine through spatial and wavelength multiplexing several highly manufacturable chips that integrate a grating and therefore do not require additional external stabilization devices to allow dense wavelength multiplexing. Power levels going from 200W to 400W in a 135 micron core fiber have been achieved using two to four wavelengths. The narrow spectral emission of each chip makes the modules suitable not only for direct-diode material processing, but also for laser pumping.