Fully Integrated Actively Quenched SPAD in 0.18 μm CMOS Technology

A fully integrated single- photon avalanche diode (SPAD) in a 180 nm high voltage CMOS technology is presented. The introduced quenching circuit is realized by the 3. 3V high voltage transistors of the process to increase the excess bias voltage ${V}_{ex}$ above the usual 1.SV supply voltage of the 180nm CMOS technology. Furthermore the circuit is cascoded to increase the excess bias even more up to 6. 6V.