沟槽
材料科学
硼
毯子
光电子学
电容
西格玛
MOSFET
噪音(视频)
电气工程
电子工程
纳米技术
工程类
计算机科学
物理
复合材料
电压
晶体管
电极
图层(电子)
核物理学
人工智能
图像(数学)
量子力学
作者
Zhonghua Li,Run-Ling Li,Yu-Long Jiang,Yanwei Zhang,Yongfeng Cao,Xuejiao Wang
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2020-06-01
卷期号:41 (6): 796-799
被引量:1
标识
DOI:10.1109/led.2020.2985740
摘要
The blanket boron implant (BBI) in the sigma-shaped trench before the embedded SiGe (eSiGe) source/drain (S/D) formation for 28-nm PMOSFET is proposed in this letter. It is demonstrated that the BBI can significantly reduce the S/D junction capacitance with little influence on On/Off characteristic. In addition, the 1/f noise is also effectively lowered.
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