量子点
光电子学
电阻式触摸屏
材料科学
电阻随机存取存储器
光电效应
纳米技术
电气工程
电压
工程类
作者
Zhiliang Chen,Yating Zhang,Yu Yu,Lufan Jin,Yifan Li,Jianquan Yao
摘要
Quantum dots have widely used in a lot of micro-nano photoelectric devices. In this work, PbS quantum dots have been synthesized successfully then a RRAM based on those quantum dots and PMMA mixture material was prepared by solution processed method at room temperature. We have demonstrated that the memory device shows typical resistance switching characteristic and high resistance ratio ( >104). To study the quantum dots based RRAM provides an opportunity to develop the next generation high-performance memory devices and open up a new application field of QDs materials in the future.
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