响应度
红外线的
比探测率
暗电流
光电子学
材料科学
焦平面阵列
基点
光学
光电探测器
量子效率
波长
大幅面
工作温度
量子阱红外探测器
量子阱
物理
激光器
热力学
作者
Gongrong Deng,Wenyun Yang,Peng Zhao,Yiyun Zhang
摘要
In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a high-operability (∼99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 × 512 focal plane array (with a 50% cut-off wavelength at 4.1 μm at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for high operation temperature detection applications. At 150 K and −400 mV bias, the photodetectors exhibit a low dark current density of ∼3.9 × 10−6 A∕cm2, a quantum efficiency of 65.1% at peak responsivity (∼3.8 μm), and a specific detectivity of 1.73 × 1012 Jones. From 150 to 185 K, the focal plane array exhibits ∼30.2 mK and ∼69.5 mK noise equivalent temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.
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