Impurity diffusion induced dynamic electron donors in semiconductors

Low-energy impurity diffusion in a host material is often regarded as an adiabatic process, characterized by its adiabatic potential energy barrier. Here we show that the diffusion process in semiconductors can involve nonadiabatic electron excitations, rending it to be a more complicated process. Impurity diffusion in a device at working temperature can pump one electron up from localized impurity state into the host conduction band and causes the impurity to be a dynamic donor since it temporarily loses its electron to the host. This nonadiabatic process, against a common belief, fundamentally change the diffusion behavior, including its barrier height and diffusion path. Although we mainly demonstrate this process with Au metal impurity in bulk Si through time-dependent density functional theory simulations, we believe this could be a rather common phenomenon as it is shown that the similar phenomena also exist in Zn, Cd impurities diffusion in bulk Si, and Ti diffusion in $\mathrm{Ti}{\mathrm{O}}_{2}$. We believe this study can open up a new direction of inquiry for such diffusion behavior in semiconductor.