材料科学
云母
化学气相沉积
纳米技术
磁电阻
纳米晶
半导体
过渡金属
化学工程
光电子学
磁场
复合材料
工程类
催化作用
物理
化学
量子力学
生物化学
作者
Songsong Chen,Hongtao Liu,Fuhai Chen,Kai Zhou,Yunzhou Xue
出处
期刊:ACS Nano
[American Chemical Society]
日期:2020-09-04
卷期号:14 (9): 11473-11481
被引量:39
标识
DOI:10.1021/acsnano.0c03863
摘要
Different from layered two-dimensional (2D) transition metal dichalcogenides (TMDs), iron dichalcogenides crystallize in the most common three-dimensional pyrite or marcasite structures. Layered iron dichalcogenides are rarely reported and little is known about their structures and properties. Here, layered hexagonal phase iron ditelluride FeTe2 (h-FeTe2) nanocrystals are grown on mica by atmospheric pressure chemical vapor deposition (APCVD) method and are fully characterized by various methods. Like other 2D layered TMD materials, the FeTe2 nanoflakes exhibit regular hexagon, half hexagon, or triangle shapes with a controllable thickness of 6-95 nm and lateral length from a few to tens of micrometers. A simple and effective method is used to transfer the FeTe2 nanoflakes from the mica substrate onto any other substrates without quality deterioration by using polystyrene (PS) as a support polymer, which can also be operated in ethanol or ethylene glycol in a glovebox to avoid contact with water and air. Temperature-dependent electrical transport demonstrates that the FeTe2 nanoflake is a semiconductor with a variable range hopping (VRH) conduction, and its nonsaturated linear magnetoresistance (MR) reaches up to 10.4% under magnetic field of 9 T at 2 K, both probably due to its structure disorders. No signature of magnetic ordering is observed down to 2 K. The CVD growth of this layered FeTe2 represents an addition to the extensive library of 2D materials, particularly iron chalcogenides or alloys. Synthesis, properties, and even doping of phase pure h-FeTe2 call for further study in the future.
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