Impact of thermal stress on the piezoelectric and dielectric properties of PbTiO3 thick films on various substrates

The impact of thermal stress on the polarization, as well as dielectric and piezoelectric properties of (001) oriented PbTiO3 (PTO) thick films deposited on various substrates was investigated based on Landau-Devonshire thermodynamic model. The results showed that dielectric and piezoelectric properties of PTO films depend strongly on the thermal stress in PTO films decided by the deposition temperature TG and the thermal expansion coefficients' difference between PTO films and substrates. For IC-compatible substrates such as Si, c-sapphire, and a-sapphire that induce tensile in-plane thermal stresses, the dielectric and piezoelectric responses and tunabilities of PTO films were enhanced. Whereas for PTO films on MgO, compressive thermal in-plane stresses can degraded the dielectric and piezoelectric responses and tunabilities of the films.