聚酰亚胺
光电探测器
响应度
材料科学
光电子学
薄脆饼
探测器
胶粘剂
光学透明度
光电二极管
锗
图层(电子)
纳米技术
光学
硅
物理
作者
Wei-Hao Ho,Yahao Dai,Yu Deng,Cheng-Ming Lin,Y.-Y. Chen,C.-H. Lee,Liu C
摘要
A flexible Ge-on-polyimide photodetector is demonstrated. The single crystalline thin film of Ge was transferred on the polyimide by adhesive wafer bonding and smart-cut techniques. A simple tunneling metal-oxide-semiconductor structure is fabricated for the detector applications. Due to the transparency of the polyimide, the responsivity of the detector is sensitive to the environments. At −2 V, the photodetector on the stainless steel has responsivities of 220, 200, and 140 mA/W at wavelength of 850, 1310, and 1550 nm, respectively.
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