PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen

Highly uniform films were deposited by plasma enhanced atomic layer deposition (PEALD) using tetrakis(ethylmethylamino)zirconium (TEMAZ) and as precursors. The deposition rates were 0.14 and 0.11 nm/cycle at temperatures of 110 and 250°C, respectively. films deposited at 150°C contained nitrogen, incorporated from the Zr-precursor, which contains four amino-groups. In the absence of a plasma, a film was not deposited with TEMAZ and at 150°C. The electrical characteristics including breakdown strength and permitivity were also evaluated. The permitivities for 110°C- and films were 16.1 and 26.9, respectively. © 2004 The Electrochemical Society. All rights reserved.