Enhanced Switching Stability in Forming‐Free SiNx Resistive Random Access Memory Devices with Low Power Consumptions Based on Local Pt Doping in a Stacked Structure

Abstract In this study, forming‐free and reliable resistive switching characteristics are demonstrated by using Pt doping in a stacked structure of SiN x resistive random access memory cells. Pt nanoparticles are embedded in situ and the size of them are about 1–2 nm. It ensures the potential of size scaling for the devices. Compared to those without Pt doping, a more reliable switching stability with better endurance and retention characteristics is obtained. The operating voltages and currents are low so that it is suitable for low power consumption applications. Films deposited at higher temperature show better compactness.