溅射
薄膜晶体管
材料科学
物理气相沉积
基质(水族馆)
光电子学
薄膜
合金
平板显示器
铟
氧化物
镓
晶体管
图层(电子)
冶金
纳米技术
电气工程
工程类
电压
地质学
海洋学
标识
DOI:10.1002/9781119161387.ch11_02
摘要
Sputtering is a phenomenon where the surface atoms or molecules of a solid target are ejected when high energy particles collide against its surface. This chapter presents the evolution of ULVAC sputtering equipment used across all the thin-film transistor (TFT) manufacturing generations. In 1993 when the flat panel display (FPD) market was booming, ULVAC developed and released the first cluster-type sputtering physical vapor deposition (PVD) equipment for use in the TFT array manufacturing process. The chapter focuses on the new TFT material used in the transparent oxide semiconductor (TOS) represented by indium gallium zinc oxide (IGZO), including suggestion of the optimal cathode type as well as the sputtering technology. The copper-alloy developed by ULVAC can achieve a low-resistance metallization film featured by better barrier performance and adhesion property with the glass substrate and base layer than those of existing metal films.
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