空位缺陷
掺杂剂
Atom(片上系统)
兴奋剂
从头算
弗伦克尔缺陷
间质缺损
材料科学
结晶学
晶体缺陷
从头算量子化学方法
电子结构
镓
半导体
化学
计算化学
分子
光电子学
冶金
有机化学
嵌入式系统
计算机科学
作者
Dan Sun,Yinlu Gao,Xue Jiang,Jijun Zhao
标识
DOI:10.1016/j.jallcom.2019.04.253
摘要
Using ab initio calculations, we systemically investigated the energetics and stability of various defects (vacancy, interstitial atom, anti-site defect and dopant atom), optical properties of β-Ga2O3 with O monovacancy, electronic structures of β-Ga2O3 doped with P, Ge, Sn, Si, N and Cl, as well as the effect of the dopant atom on the energetics of monovacancy in these doped β-Ga2O3. From energetic point of view, O atom escapes from the lattice site more easily than Ga atom, thus forming a vacancy and an interstitial O atom. After relaxation, the interstitial Ga/O atom or anti-site defect forms a dumbbell configuration with the neighboring Ga/O atom and the surrounding atoms escape from the initial sites. In addition, existence of a Ga/O vacancy would reduce the formation energy of a new O/Ga vacancy. Both n-type and p-type conduction behaviors have been achieved in Si, Ge, Sn, P, Cl, and N doped β-Ga2O3, where the rarely observed p-type material was obtained by N dopants. However, we have also found that p-type N doped β-Ga2O3 would transform into n-type semiconductor by introducing oxygen/gallium vacancy defects. The atomistic insight into defect stability and electronic structures from the present study is beneficial for fabrication of β-Ga2O3 based semiconductor devices.
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