Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition

In this study, we achieved a wafer-scale molybdenum disulfide (MoS2) layer growth using metal-organic chemical vapor deposition. It was systematically investigated the growth behavior of the layered MoS2 on a c-plane sapphire as a function of the precursor pre-flow, ratio of precursors, and growth temperature. Our results indicated that the MoS2 growth could be changed to the quasi two-dimensional (2D) growth mode from the three-dimensional (3D) growth mode or vice versa by controlling the parameters. Finally, the wafer-scale homogeneous MoS2 growth was successfully demonstrated.