CNTFET modeling and low power SRAM cell design

This paper presents compact model for carbon nanotube field effect transistor (CNTFET) which is derived from electronic structure of carbon nanotube (CNT). Complete current transport model is developed from carrier concentration in CNT for different chirality. The model describes the variation of charge developed on CNT with gate voltage. I-V characteristics have been efficiently modeled and compact model is developed for HSPICE circuit simulations. Finally 6T static random access memory (SRAM) cell is designed with developed model and analysis is done for various performance metrics. Results show that CNTFET based 6T-SRAM consumes very less standby power with high static noise margins.