光学
放大器
皮秒
材料科学
厚板
光电子学
激光器
物理
地球物理学
CMOS芯片
作者
Ying Chen,Ke Liu,Jing Yang,Feng Yang,Hongwei Gao,Nan Zong,Lei Yuan,Yan‐Yong Lin,Zhao Liu,Qinjun Peng,Yong Bo,Dafu Cui,Zuyan Xu
出处
期刊:Journal of Optics
[IOP Publishing]
日期:2016-05-26
卷期号:18 (7): 075503-075503
被引量:13
标识
DOI:10.1088/2040-8978/18/7/075503
摘要
We have demonstrated a high pulse energy, high peak power, and high beam quality picosecond (ps) master oscillator power amplifier system of 1064 nm at a pulse repetition rate of 5 kHz. This system consisted of a ps mode-locked oscillator, a regeneration amplifier, and three-stage Nd:YAG slab amplifiers, which enabled us to manage good thermal issues and provide an average power of 41 W. Up to 8.2 mJ of energy per pulse was achieved at the total absorbed pump power of 460 W with an average extraction efficiency of 8.5%. The pulse duration was 25.3 ps, which corresponds to a peak power of 324 MW. The beam quality factors of M2 were measured to be along the x axis direction and along the y axis direction, respectively, and the corresponding brightness was as high as 5.88 × 108 W cm−2 · Sr.
科研通智能强力驱动
Strongly Powered by AbleSci AI