纤锌矿晶体结构
凝聚态物理
光谱学
各向异性
物理
材料科学
电子能带结构
电子结构
原子物理学
光学
衍射
量子力学
作者
Sandip Ghosh,Patrick Waltereit,O. Brandt,H. T. Grahn,K. H. Ploog
出处
期刊:Physical review
日期:2002-01-07
卷期号:65 (7)
被引量:240
标识
DOI:10.1103/physrevb.65.075202
摘要
We investigate the modification of the electronic band structure in wurtzite GaN due to biaxial strain within the M plane using photoreflectance (PR) spectroscopy. The compressively strained M-plane GaN film is grown on $\ensuremath{\gamma}\ensuremath{-}{\mathrm{LiAlO}}_{2}$ (100). In the PR measurements, the electric-field vector (E) of the probe light is polarized parallel $(\ensuremath{\Vert})$ and perpendicular $(\ensuremath{\perp})$ to the c axis of GaN which lies in the growth plane. For E$\ensuremath{\perp}$c, the spectrum exhibits only a single resonant feature at lower energies, while for E$\ensuremath{\Vert}$c a different single resonant feature appears at higher energies. To identify these features, we calculate the strain dependence of the interband transition energies and the components of the oscillator strength using the $\mathbf{k}\ensuremath{\cdot}\mathbf{p}$ perturbation approach. Comparison with the calculations shows that the origin of the PR features and their significant in-plane polarization anisotropy is related to the influence of M-plane, biaxial compressive strain on the valence-band structure of GaN. We estimate the value of the deformation potential ${D}_{5}$ to be $\ensuremath{-}4.7 \mathrm{eV}.$
科研通智能强力驱动
Strongly Powered by AbleSci AI