Accurate RF extraction method for resistances and inductances of sub-0.1 [micro sign]m CMOS transistors

An accurate RF method using a linear regression of high-frequency Z-parameter equations at zero gate voltage is developed to extract resistances and inductances of sub-0.1 µm MOSFETs. Good agreement between the measured and modelled S-parameters is observed up to 30 GHz, verifying the accuracy of the RF method.