结晶
材料科学
非晶硅
硅
多晶硅
分析化学(期刊)
氢
无定形固体
纳米晶硅
基质(水族馆)
傅里叶变换红外光谱
晶体硅
光电子学
化学工程
化学
结晶学
薄膜晶体管
纳米技术
海洋学
有机化学
图层(电子)
色谱法
地质学
工程类
作者
K. Pangal,James C. Sturm,S. Wagner,Temel Büyüklimanli
摘要
We report that a room temperature hydrogen plasma exposure in a parallel plate diode type reactive ion etcher can reduce the time required for the subsequent thermal crystallization of amorphous silicon time by a factor of five. Exposure to hydrogen plasma reduces the incubation time, while the rate of crystallization itself is not greatly affected. This plasma enhanced crystallization can be spatially controlled by masking with patterned oxide, so that both amorphous and polycrystalline areas can be realized simultaneously at desired locations on a single substrate. The enhancement of crystallization rate is probably due to the creation of seed nuclei at the surface. The films have been characterized by UV reflectance, x-ray diffraction, plan view transmission electron microscopy, Fourier transform infrared absorption, secondary ion mass spectroscopy, and four-point probe measurement of electrical conductivity.
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