铁电性
材料科学
量子隧道
电极
神经形态工程学
非易失性存储器
纳米技术
纳米结构
光电子学
凝聚态物理
计算机科学
化学
电介质
物理
物理化学
机器学习
人工神经网络
作者
Rohit Soni,A. Petraru,P. Meuffels,O. Vávra,Martin Ziegler,Seong Keun Kim,Doo Seok Jeong,N. A. Pertsev,H. Kohlstedt
摘要
Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO3 barrier, La0.7Sr0.3MnO3 bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages. The electroresistance displayed by ferroelectric tunnel junctions could be used for non-volatile computer memories and other computing applications. Here, the authors show that effects from ferroelectric–electrode interfaces can have a strong positive impact on the electroresistance in such junctions.
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