Amorphous SiO2 coating layers with thicknesses of ca. 2, 7, 10, and 15 nm are introduced into bulk@nanowire core@shell Si particles via direct thermal oxidation at 650–850 °C. Of the coated samples, Si with a coating thickness of ca. 7 nm has the best electrochemical performance. This sample shows an initial discharge capacity of 2279 mA h g−1 with a Coulombic efficiency of 92% and displays 83% capacity retention after 50 cycles at 0.2C rate. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.