折射率
载流子密度
半导体激光器理论
激光器
波长
光电子学
半导体
材料科学
活动层
光学
物理
图层(电子)
纳米技术
兴奋剂
薄膜晶体管
标识
DOI:10.1109/jqe.1980.1070603
摘要
Carrier density dependence of the refractive index in the active layers of semiconductor lasers is evaluated from the wavelength shift with increases in current by taking into account effects of the active layer temperature rise and lateral carrier and optical field distributions on the wavelength shift. The derived refractive index change due to carrier density increase is -4 \times 10^{-27} m 3 , which is in good agreement with the theoretical value.
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