材料科学
透射电子显微镜
石墨烯
微观结构
位错
薄膜
晶界
光电子学
纳米技术
复合材料
作者
Hyobin Yoo,Kunook Chung,Yong Seok Choi,Chan Soon Kang,Kyu Hwan Oh,Miyoung Kim,Gyu‐Chul Yi
标识
DOI:10.1002/adma.201103829
摘要
Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.
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