Reassessment of the intrinsic carrier density temperature dependence in crystalline silicon

The intrinsic carrier density ni of crystalline silicon is an essential parameter for the simulation of electrical and thermal behavior of silicon devices. At 300 K, a value of ni=9.65×109 cm−3 has been determined by extensive experimental studies. However, the temperature dependence of this parameter remains to be verified. In this work, we propose a new expression ni=1.541×1015T1.712exp(−Eg0/(2kT)) thanks to an updated fit of experimental data. Polynomial fits of (mdc*/m0)32 and (mdv*/m0)32 are also proposed to model NC and NV.