退火(玻璃)
扩散阻挡层
材料科学
电阻率和电导率
过渡金属
分析化学(期刊)
卢瑟福背散射光谱法
衍射
铜
硅
冶金
薄膜
化学
纳米技术
工程类
图层(电子)
色谱法
电气工程
催化作用
物理
光学
生物化学
作者
H. Ono,Tadashi Nakano,Tomohiro Ohta
摘要
In order to find appropriate diffusion barrier materials for Cu, the diffusion of Cu into Si through various barrier metals M (M=Cr, Ti, Nb, Mo, Ta, W) was investigated. The behavior of Cu in Cu/M/Si multilayers was measured after annealing using x-ray diffraction analysis, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and electric resistance change. Only Cu/Ta/Si and Cu/W/Si multilayers retained their multilayer structures after annealing at 600 °C×1 h in H2 without resistivity increases. Multilayers of the other metals did not retain their structures after the same annealing condition. This difference in the barrier properties of the transition metals appeared to be related to the metal-Cu binary phase diagrams and their self-diffusion coefficients.
科研通智能强力驱动
Strongly Powered by AbleSci AI