材料科学
外延
光电子学
异质结
氮化镓
碳化硅
晶体管
宽禁带半导体
基质(水族馆)
半导体
纳米技术
复合材料
电气工程
地质学
工程类
电压
海洋学
图层(电子)
作者
Sirui Feng,Zheyang Zheng,Yan Cheng,Yat Hon Ng,Wenlei Song,Tao Chen,Li Zhang,Бо Лю,Kai Cheng,Kevin J. Chen
标识
DOI:10.1002/adma.202201169
摘要
A hybrid field-effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide-bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET-GaN is usually grown on on-axis foreign substrates including SiC, whereas SiC homoepitaxy prefers off-axis substrates. This work presents a GaN-based heterostructure epitaxially grown on a conventional 4° off-axis 4H-SiC substrate, which manifests its high quality and suitability for constructing GaN-based high-electron-mobility transistors, thereby suggesting a practical approach to realizing HyFETs. In the meanwhile, a distinct two-step biaxial strain-relaxation process is proposed and studied with comprehensive characterizations.
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