LiTaO3:Bi3+,Tb3+,Ga3+,Ge4+: A Smart Perovskite with High Charge Carrier Storage Capacity for X‐Ray Imaging, Stress Sensing, and Non‐Real‐Time Recording

Abstract Developing X‐ray or UV‐light charged storage and mechanoluminescence (ML) materials with high charge carrier storage capacity is challenging. Such materials have promising utilization in developing new applications, for example, in flexible X‐ray imaging, stress sensing, or non‐real‐time recording. Herein, the study reports on such materials; Bi 3+ , Tb 3+ , Ga 3+ , or Ge 4+ doped LiTaO 3 perovskite storage and ML phosphors. Their photoluminescence, thermoluminescence (TL), and ML properties are studied. The charge carrier trapping and release processes in the Bi 3+ , Tb 3+ , Ga 3+ , or Ge 4+ doped LiTaO 3 are explained by using the constructed vacuum referred binding energy diagram of LiTaO 3 including the energy level locations of unintended defects, Tb 3+ , Bi 3+ , and Bi 2+ . The ratio of the TL intensity after X‐ray charging of the optimized LiTaO 3 :0.005Bi 3+ ,0.006Tb 3+ ,0.05Ga 3+ , or LiTaO 3 :0.005Bi 3+ ,0.006Tb 3+ ,0.05Ge 4+ to that of the state‐of‐the‐art BaFBr(I):Eu 2+ is ≈1.2 and 2.7, respectively. Force induced charge carrier storage phenomena is studied in the Tb 3+ , Bi 3+ , Ga 3+ , or Ge 4+ doped LiTaO 3 . Proof‐of‐concept compression force distribution sensing and X‐ray imaging is demonstrated by using optimized LiTaO 3 :0.005Bi 3+ ,0.006Tb 3+ ,0.05Ga 3+ dispersed in a hard epoxy resin disc and in a silicone gel film. Proof‐of‐concept color‐tailorable ML for anti‐counterfeiting is demonstrated by admixing commercial ZnS:Cu + ,Mn 2+ with optimized LiTaO 3 :0.005Bi 3+ ,0.006Tb 3+ ,0.05Ge 4+ in an epoxy resin disc.