Demonstration of High Interface Quality AlGaN/GaN MIS-HEMT with Fully Wet Recess and MOCVD Grown AlN Dielectric

In this study, the results indicate that a method combining fully-recessed wet etching and regrown channel by MOCVD is capable of obtaining high quality interface in GaN MIS-HEMT. A low V th hysterisis GaN MIS-HEMT of 0.3V is demonstrated in this work. The GaN MIS-HEMT has a V th of-1.5 V, a high I d ,max of 771mA/mm and a R ON of 13.5 Ω·mm. The wet etching shows good uniformity while the MOCVD grown AlN enhances the maximum drain current. The concept provides new insights to gate recess fabrication and MOCVD grown high quality dielectrics.