兴奋剂
材料科学
光电流
光电子学
钙钛矿(结构)
Crystal(编程语言)
带隙
光电效应
吸收边
离子
费米能级
结晶学
化学
物理
电子
计算机科学
有机化学
量子力学
程序设计语言
作者
Zheng Gong,Wenqian Zhang,Shangke Pan,Jianguo Pan
标识
DOI:10.1016/j.jcrysgro.2022.126604
摘要
Controllable doping is extensively used in designing the electronic and optical properties of perovskite. Bi-doped CsPbBr3 crystal shows a significant redshift at the absorption edge. However, the increase of defect states caused by Bi3+ ions will degrade the optical and electrical properties of the crystal. In this work, we report a series of Ag+/Bi3+ co-doped CsPbBr3 crystals prepared via a Bridgman method. The introduction of Ag+ ions could prevent the change for Fermi level and reduce the concentration of defect states caused by Bi3+ doping. Ag+/Bi3+ co-doped CsPbBr3 crystals show high carrier mobility that compare with undoped CsPbBr3 crystals. The light doping of Ag+/Bi3+ could remarkably improve the detection performances of CsPbBr3 to UV and laser. The maximum photocurrent for Ag+/Bi3+ co-doped CsPbBr3 crystal is even 50 times higher compared with undoped CsPbBr3 crystal under 365 nm UV lamps. Our findings provide a new strategy for controlling doping to improve the photoelectric properties of perovskite.
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