Enhanced Programming and Erasing Speeds of Charge-Trapping Flash Memory Device With Ge Channel

Charge-trapping (CT) flash memory devices with Ge channel are studied for the first time. The operation characteristics of Ge-channel devices with different interfacial layers (IL), including GeO2, GeON, and AlON, are investigated. The programming/erasing speeds of devices with Ge channel can be significantly improved as compared with those with Si or SiGe channel. The retention properties of Ge-channel CT flash devices are much enhanced with a stacked tunneling layer formed by the low-temperature processes. However, the endurance characteristics of Ge-channel devices need improvement as compared with those of Si-channel devices. This may be resolved by a high-quality IL formed with an electron cyclotron resonance system and passivated with a H2 treatment.