Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

光致发光 材料科学 衍射 透射电子显微镜 量子阱 分析化学(期刊) 图层(电子) 强度(物理) X射线晶体学 化学 光学 纳米技术 光电子学 冶金 物理 激光器 色谱法
作者
Abdul Rahman Mohmad,F. Bastiman,C. J. Hunter,Faezah Harun,D.F. Reyes,D. L. Sales,D. González,Robert D. Richards,J. P. R. David,Burhanuddin Yeop Majlis
出处
期刊:Semiconductor Science and Technology [IOP Publishing]
卷期号:30 (9): 094018-094018 被引量:17
标识
DOI:10.1088/0268-1242/30/9/094018
摘要

The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown under various conditions were studied by photoluminescence (PL), high resolution x-ray diffraction (HR-XRD) and transmission electron microscopy (TEM). At 10 K, the 90 nm bulk sample shows two PL peaks at 1.18 and 1.3 eV. The temperature and power dependent PL data suggest that both PL peaks originate from the GaAsBi layer which consists of two regions with different Bi concentrations. The TEM images verify that the Bi concentration decreases monotonically across the layer, showing a high Bi concentration (∼0.053) close to the bottom interface which then reduces to ∼0.02 for thicknesses >25 nm. Besides, the high Bi content region cannot be detected by HR-XRD due to a broad and weak diffraction intensity. For multiple QW samples, a similar Bi profile was also observed in which the first well has a significantly higher Bi content compared to the other wells. The energy separation between the PL peaks is 0.12 eV and is consistent with the energy difference observed for the bulk sample. However, two PL peaks were not observed in the other GaAsBi bulk sample which was grown under different conditions, showing the importance of growth optimizations.
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