Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O<SUB>2</SUB>/N<SUB>2</SUB>/CHF<SUB>3</SUB> Plasma

材料科学 钝化 无定形固体 分析化学(期刊) 蚀刻(微加工) 图层(电子) 小丘 等离子体 占空比 复合材料 电压 电气工程 化学 结晶学 物理 色谱法 量子力学 工程类
作者
Min Hwan Jeon,Jin Woo Park,Deok Hyun Yun,Kyong Nam Kim,Geun Young Yeom
出处
期刊:Journal of Nanoscience and Nanotechnology [American Scientific Publishers]
卷期号:15 (11): 8577-8583 被引量:7
标识
DOI:10.1166/jnn.2015.11489
摘要

The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2.
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