氮化镓
蚀刻(微加工)
材料科学
制作
光电子学
干法蚀刻
镓
氢氧化钾
Crystal(编程语言)
纳米技术
氮化物
等离子体刻蚀
化学工程
冶金
工程类
计算机科学
病理
程序设计语言
替代医学
医学
图层(电子)
作者
Kevin Dannecker,Jens Baringhaus
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2020-06-18
卷期号:38 (4)
被引量:8
摘要
During the last few years and with the commercialization of the gallium nitride based high electron mobility transistor, research effort on gallium nitride has been strongly increasing. Besides activities regarding lateral devices like the gallium nitride high electron mobility transistor, progress in the growth of native gallium nitride substrates encourages the development of vertical devices. In particular, for power electronics above 600 V, vertical architecture shows superior performance compared to lateral devices. This makes the vertical approach interesting for the use in traction inverters in the rising market of e-mobility. A key aspect in the fabrication of most vertical devices is the formation and optimization of trenches in the semiconductor. In this work, the fabrication of 1.5–2μm deep, crystal plane oriented trenches in gallium nitride with lateral dimension as small as 1μm is demonstrated. The trenches were produced by means of plasma etching based on sulfur hexafluoride and argon as well as a subsequent wet etching step in tetramethylammonium hydroxide and potassium hydroxide. By accurately aligning the trenches along the [1¯010]- and [12¯10]-directions, the authors were able to evaluate the wet etching behavior of the respective crystal planes and achieved smooth vertical sidewalls.
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