材料科学
微波食品加热
等离子体
等离子炬
化学气相沉积
钻石
大气压等离子体
离子源
大气压力
喷射(流体)
分析化学(期刊)
微等离子体
氩
腔磁控管
基质(水族馆)
薄膜
光电子学
原子物理学
化学
溅射
纳米技术
复合材料
物理
量子力学
海洋学
色谱法
热力学
地质学
作者
К. Ф. Сергейчев,Н. А. Лукина,N. R. Arutyunyan
标识
DOI:10.1134/s1063780x19060096
摘要
An electrodeless microwave jet plasma source is considered, and its various applications in the technology of chemical vapor deposition of diamond films and dimension increasing of small diamond single crystals synthesized at high pressures and temperatures are discussed. The plasma jet is ignited in an atmospheric-pressure gas (argon) flow with hydrogen and methane additives. The operation of the microwave jet reactor is described, and the plasma characteristics measured using emission spectroscopy are presented. The brightly glowing atmospheric-pressure plasma jet is ignited and stably burns at a microwave power of ≤1 kW supplied from a microwave oven magnetron. The specific microwave power density absorbed by the compact plasma jet (≤104 W/cm3) is comparable with that absorbed by a dc arc. The growth rate of the polycrystalline diamond layer amounts to 40 µm/h. The process of film deposition on the substrate can be controlled by scanning the substrate surface with the jet.
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