Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells

Black silicon processing is a promising research area to improve optical properties of silicon solar cells. Currently, RIE method is used at cryogenic temperature because it enables a very good control of shapes of nano-structures but working at cryogenic temperature in a clean room can be an issue. In order to produce black silicon under realistic industrial conditions, room temperature process has to be achieved. We present a study aiming at etching silicon wafer surfaces using “Room Temperature SF6/O2 Reactive Ion Etching” (RT-RIE).