与非门
逆变器
材料科学
逻辑门
晶体管
通流晶体管逻辑
电子线路
电压
电气工程
电子工程
光电子学
工程类
作者
Heng Zhang,Chao Li,Jianlu Wang,Weida Hu,David Wei Zhang,Peng Zhou
标识
DOI:10.1002/adfm.201805171
摘要
Abstract Due to the development of 2D material transistors research and preparation process, many fundamental logic units, like inverter and NAND gate, have been achieved to promote large‐scale integration. However, there are critical challenges like voltage loss and large dynamic power consumption for integrated circuits based on 2D semiconductors. Here high‐performance logic devices via different MoS 2 ‐WSe 2 configurations, a MoS 2 ‐WSe 2 complementary logic transmission gate with the ability to transport electrical level without any voltage loss and a MoS 2 ‐WSe 2 complementary logic inverter with small dynamic power consumption and maximum voltage gain of 18 are demonstrated. Furthermore, an essential logic unit like Schmidt flip‐flop is put forward by combining MoS 2 ‐WSe 2 inverter and graphene floating gate. The realization of various logics achieved by different MoS 2 ‐WSe 2 configurations makes it much easier to fabricate multifunctional system on a chip, which has a significant meaning for the development of high density integrated circuits.
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