蚀刻(微加工)
材料科学
基质(水族馆)
各向异性
各向同性腐蚀
反应离子刻蚀
硅
光电子学
纳米技术
光学
地质学
海洋学
物理
图层(电子)
作者
Wei Chen,Yaoping Liu,Lixia Yang,Juntao Wu,Quansheng Chen,Yan Zhao,Yan Wang,Xiaolong Du
标识
DOI:10.1038/s41598-018-21877-x
摘要
Abstract The so called inverted pyramid arrays, outperforming conventional upright pyramid textures, have been successfully achieved by one-step Cu assisted chemical etching (CACE) for light reflection minimization in silicon solar cells. Due to the lower reduction potential of Cu 2+ /Cu and different electronic properties of different Si planes, the etching of Si substrate shows orientation-dependent. Different from the upright pyramid obtained by alkaline solutions, the formation of inverted pyramid results from the coexistence of anisotropic etching and localized etching process. The obtained structure is bounded by Si {111} planes which have the lowest etching rate, no matter what orientation of Si substrate is. The Si etching rate and (100)/(111) etching ratio are quantitatively analyzed. The different behaviors of anisotropic etching of Si by alkaline and Cu based acid etchant have been systematically investigated.
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