High-mobility p-type semiconducting two-dimensional β-TeO2

Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO2 nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 106 and a field-effect hole mobility of up to 232 cm2 V−1 s−1 at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm2 V−1 s−1 on cooling to −50 °C.