铁电性
材料科学
电介质
工程物理
纳米技术
光电子学
工程类
作者
Anastasia Chouprik,Dmitrii Negrov,Evgeny Y. Tsymbal,A. Zenkevich
出处
期刊：Nanoscale
[The Royal Society of Chemistry]
日期：2021-01-01
卷期号：13 (27): 11635-11678
被引量：65
摘要
Following introduction to defects in classical ferroelectrics as well as in dielectric HfO 2 , this review covers recent experimental results on the impact of defects in ferroelectric HfO 2 on its functional properties and resulting performance of memory devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI
爱静静
哎嘿
丰盛的煎饼
不配.
西红柿炒番茄
kento
加菲丰丰
乐乐乐乐乐乐
好困
HEIKU
寻道图强
Hayat
starofjlu
ShowMaker
从容芮
InfoNinja
OnionJJ
杳鸢
大方的枕头
Cloud
皖公网安备34019202002308
