材料科学
钝化
光电子学
能量转换效率
导电体
图层(电子)
钙钛矿(结构)
纳米技术
电子工程
工程类
复合材料
化学工程
作者
Ping Li,Lingyan Lin,Hao Xiong,Linqin Jiang,Shui−Yang Lien,Jiansheng Li,Wen-Hsien Sun,Yu Qiu
出处
期刊:Solar RRL
[Wiley]
日期:2021-12-03
卷期号:6 (2)
被引量:1
标识
DOI:10.1002/solr.202100878
摘要
Interdigitated back‐contact (IBC) perovskite solar cells (PSCs) have great potential for highly efficient and low‐cost solar energy conversion. However, their full potential has not been achieved. In particular, there is no practically available front surface and rear contact design for IBC‐PSCs as for the conventional crystalline silicon IBCs, which propose challenges in realizing high efficiency. Herein, innovative quasi‐interdigitated back‐contact (QIBC) PSC designs that enhance the effective lateral transport of carriers are proposed and therefore a realistic wide pitch for back contacting in the range of hundreds of micrometers is allowed. The novel design features implementing an appropriate conductive and well‐passivated carrier transport layer, referred to as a front‐carrier transport layer (FCTL), on the front surface of the QIBC‐PSC. Technology computer‐aided design optical/device simulations are used to investigate the function of the FCTL in increasing the cell performance and achieve 23.23% of power conversion efficiency (PCE) after FCTL design optimizations for a QIBC‐PSC with a rear contact pitch of 200 μm. Further improvement of the PCE over 25% can be potentially achievable by improving the film and passivation quality. This work opens up a new approach to fabricate realistic highly efficient IBC‐PSCs.
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