德拉姆
计算机科学
与非门
相变存储器
瓶颈
赛道记忆
通用存储器
非易失性随机存取存储器
非易失性存储器
延迟(音频)
可靠性(半导体)
闪存
动态随机存取存储器
嵌入式系统
数据保留
计算机硬件
内存刷新
功率(物理)
计算机存储器
半导体存储器
工程类
相变
计算机网络
电信
计算机安全
物理
工程物理
频道(广播)
量子力学
作者
Cristian Zambelli,G. Navarro,Véronique Sousa,Lucian Prejbeanu,L. Perniola
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:2017-07-07
卷期号:105 (9): 1790-1811
被引量:33
标识
DOI:10.1109/jproc.2017.2710217
摘要
The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate NAND Flash and dynamic random access memories (DRAMs) to partially hide the limitation of the nonvolatile memory technology. However, due to the increased request for storage density coupled with performance that positions the storage tier closer to the latency of the processing elements, NAND Flash are becoming a serious bottleneck. DRAM as well are a limitation in the SSD reliability due to their vulnerability to the power loss events. Several emerging memory technologies are candidate to replace them, namely the storage class memories. Phase change memories and magnetic memories fall into this category. In this work, we review both technologies from the perspective of their possible application in future disk drives, opening up new computation paradigms as well as improving the storage characteristics in terms of latency and reliability.
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