Chemical shifts and optical properties of tin oxide films grown by a reactive ion assisted deposition

X射线光电子能谱 分析化学(期刊) 氧化锡 螺旋钻 材料科学 氧化物 离子 Atom(片上系统) 椭圆偏振法 俄歇电子能谱 薄膜 化学 原子物理学 纳米技术 核磁共振 冶金 物理 有机化学 色谱法 计算机科学 核物理学 嵌入式系统
作者
Won‐Kook Choi,Hyunsung Jung,Seok‐Keun Koh
出处
期刊:Journal of vacuum science & technology [American Vacuum Society]
卷期号:14 (2): 359-366 被引量:114
标识
DOI:10.1116/1.579901
摘要

Highly oriented nonstoichiometric tin oxide thin films were grown by a reactive ion assisted deposition onto Si(100) and glass substrates at room temperature as a function of relative ion (O)/atom (Sn metal) arrival ratio, and concurrently the deposited ion energy per atom (eV/atom) were changed from 10 to 100 eV/atom. As-deposited tin oxide films show preferred orientation along the SnO2〈101〉 axis and the x-ray diffraction peak intensity appears maximum at an average energy of about 50 eV/atom. From quantitative Auger electron spectroscopy, characteristic transitional Auger peaks of Sn metal MNN transitions were shifted to lower kinetic energies by 4–6±1.0 eV as the Sn4+ component becomes dominant in the deposited tin oxide films and the position of O KL1,2L2,3 transition line was also shifted to lower kinetic energy by 1–2±1.0 eV as the composition of deposited tin oxide films were changed from SnO to SnO2, respectively. On the basis of a tin 3d core level and O 1s spectra analysis by x-ray photoelectron spectroscopy, the sizable chemical shift of different valencies between stannous tin (Sn2+:SnO) and stannic tin (Sn4+:SnO2) was 1.0±0.02 eV and that of O 1s was 0.87±0.02 eV, and those values show larger shifts than previously reported ones. The refractive index n of as-deposited tin oxide films was evaluated from an ellipsometer, and spectrophotometric transmittances were measured in the wavelength range of 200–800 nm. In the luminous range, the refractive index varied from n=2.36 to 2.04 as oxygen contents increased.
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